Samsung announces that it has begun mass production of the new 512GB eUFS memories. Using the latest Samsung V-NAND 512 gigabit (Gb) 64-layer chips, the new chip offers unprecedented storage capacity and very high performance for smartphones and next-generation tablets.
Comprised of eight 512Gb V-NAND chipsets and an integrated controller, the new Samsung eUFS doubles the density of the previous 256GB model based on 48 layers in virtually the same size.
Samsung eUFS ready for integration
To drive maximum performance and energy efficiency, Samsung has introduced a new set of patented technologies, such as a renewed controller that minimizes energy consumption and accelerates the mapping process to convert logical address blocks into physical block addresses.
The sequential reading speed is 860MB/s while in sequential writing, they can reach 255MB/s. Thanks to the use of the new V-NAND chips, 42,000 IOPS (input/output per second operations) can be obtained in random reading and 40,000 IOPS in random writing.
With mass production just begun, it won’t take long before they are integrated into next-generation devices like the Samsung Galaxy S9 and Samsung Galaxy Note 9.
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